![(PKG of 10) IRF610 N-Channel Power MOSFET, 3.3A, 200V, IR, TO-220 (PKG of 10) IRF610 N-Channel Power MOSFET, 3.3A, 200V, IR, TO-220](https://cdn11.bigcommerce.com/s-hwqcohn0pq/images/stencil/160w/products/254/805/9cb11e33-8d82-56b5-b37d-cbf6fd495f52__02971.1552842053.jpg?c=2)
(PKG of 10) STP4NA60 N-Channel Power MOSFET, 600V, 4.3A, ST, TO-220
Package of 10!
These are new old stock (NOS), unused, genuine ST (SGS-Thomson) STP4NA60 N-Channel Power MOSFETs in a TO-220 package. Rated 600V, 4.3A. Marked P4NA60
Manufacturer: ST (SGS-Thomson)
Manufacturer Part Number: STP4NA60
Product Category: MOSFET
Package / Case: TO-220
Number of Channels: 1
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 4.3 A
Rds (ON) Drain-Source Resistance: < 2.2 Ω (VGS=10 V)
Power Dissipation: 100 W
RoHS: NO
Packaging: Bulk, anti-static
Description
Package of 10!
These are new old stock (NOS), unused, genuine ST (SGS-Thomson) STP4NA60 N-Channel Power MOSFETs in a TO-220 package. Rated 600V, 4.3A. Marked P4NA60
Manufacturer: ST (SGS-Thomson)
Manufacturer Part Number: STP4NA60
Product Category: MOSFET
Package / Case: TO-220
Number of Channels: 1
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 4.3 A
Rds (ON) Drain-Source Resistance: < 2.2 Ω (VGS=10 V)
Power Dissipation: 100 W
RoHS: NO
Packaging: Bulk, anti-static
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